| PART |
Description |
Maker |
| SRP1204-1R8M BOURNSINC-SRP1204-1R8M |
MAGNETICS - High Current Power Inductors 1 ELEMENT, 2 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns, Inc.
|
| CF322513-330K CF322513-R33K CF322513-220K CF322513 |
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 33 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 0.33 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 22 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 27 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 0.82 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 18 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 15 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 0.47 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 0.39 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 0.15 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 0.68 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 0.22 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Inductors 4.7uH0.1 MultiLayer High Current 1 ELEMENT, 4.7 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Inductors 1uH0.1 MultiLayer High Current 1 ELEMENT, 1 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 5.6 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 6.8 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 3.9 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - CHIP INDUCTOR HIGH CURRENT 1 ELEMENT, 3.3 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns, Inc.
BOURNS INC
|
| CW201212-R33J CW201212-12NJ CW201212-R56J CW201212 |
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.33 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.012 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.56 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.91 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.0033 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Inductor; Inductor Type:High Frequency; Inductance:13.3nH; Inductance Tolerance: /- 5 %; Current Rating:600mA; Series:CW201212; Package/Case:0805; Core Material:Alumina Ceramic; Leaded Process Compatible:Yes RoHS Compliant: Yes
|
Bourns, Inc.
BOURNS INC
|
| BC328 BC327 BC327-16 BC328-16 BC327-25 BC327-40 Q6 |
Si-Epitaxial PlanarTransistors
From old datasheet system
ECONOLINE: RSZ/P - 1kVDC & 2kVDC Isolation- UL94V-0 Package Material- No Heatsink Required- No Extern. Components Required- Toroidal Magnetics- ContinuousShort Circuit Protection ( /P-Suffix)
ECONOLINE: RSS & RSD - 1kVDC and 3KVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 85%- SMD5, SMD8, SMD10 and SMD12 case styles
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) 自动对焦进步党硅晶体管（高电流增益高集电极电流低集电极发射极饱和电压
|
SIEMENS A G
Diotec Elektronische
Infineon
Diotec Semiconductor
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| HX2019NLT H2005ANL H2006ANL H2008NL H2009NL H1197N |
100Base-TX VoIP Magnetics Modules
RoHS peak reflow temperature rating 245C
Power OVER Ethernet (PoE) Magnetics and (PoE ) Magnetics
|
Pulse A Technitrol Company
|
| BDP954 Q62702-D1340 BDP952 BDP956 Q62702-D1344 Q62 |
PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BDP951 BDP955 BDP953 Q62702-D1343 Q62702-D1339 Q62 |
NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain) NPN硅自动对焦功率晶体管输出级驱动器和高集电极电流高电流增益（为自动
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SRP1270-1R8M SRP1270-8R2M |
1 ELEMENT, 1.8 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD ROHS COMPLIANT
MAGNETICS - High Current Power Inductors 1 ELEMENT, 8.2 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns, Inc.
|
| BUX11A |
HIGH CURRENT HIGH POWER HIGH SPEED SILICON N-P-N POWER TRANSISTOR
|
General Electric Solid State
GESS[GE Solid State]
ETC
|
| BUX81 |
HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR
|
Seme LAB
|
| BUX82 |
HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR
|
Seme LAB
|
| SDR0805-2R5M SDR0805-100M SDR0805-120M BOURNSINC-S |
MAGNETICS - NON-SHIELDED POWER INDUCTOR 1 ELEMENT, 2.5 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Power Inductors 10uH 7.8mm SMD
Inductor; Inductor Type:Power; Inductance:12uH; Inductance Tolerance: 20 %; Current Rating:3A; Series:SDR0805; Core Material:Ferrite DR; Leaded Process Compatible:No; Mounting Type:Surface Mount; Operating Temp. Min:-40 C RoHS Compliant: No
|
Bourns, Inc.
BOURNS INC
|
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